Semiconductor device and manufacturing method thereof

ABSTRACT

A semiconductor device includes a substrate, a gate stack, and an epitaxy structure. The gate stack over the substrate and includes a gate dielectric layer, a bottom work function (WF) metal layer, a top WF metal layer, and a filling metal. The bottom WF metal layer is over the gate dielectric layer. The top WF metal layer is over and in contact with the bottom WF metal layer. At least one of the top and bottom WF metal layers includes dopants, and the top WF metal layer is thicker than the bottom WF metal layer. The filling metal is over the top WF metal layer. The epitaxy structure is over the substrate and adjacent the gate stack.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices may be fabricatedby sequentially depositing insulating or dielectric layers, conductivelayers, and semiconductor layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. However, asthe minimum features sizes are reduced, additional problems arise thatare desired to be addressed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A and 1B are a flowchart of a method for making a semiconductordevice according to aspects of the present disclosure in variousembodiments.

FIGS. 2A to 2N respectively illustrate cross-sectional views of thesemiconductor device at various stages in accordance with someembodiments of the present disclosure.

FIG. 3A is a band diagram of the semiconductor fin, the bottom WF metallayer, and the top WF metal layer in FIG. 2J.

FIG. 3B is a band diagram of the semiconductor fin, the bottom WF metallayer, and the top WF metal layer in FIG. 2M.

FIGS. 4A to 4F respectively illustrate cross-sectional views of thesemiconductor device at various stages in accordance with someembodiments of the present disclosure.

FIG. 5A is a band diagram of the semiconductor fin, the bottom WF metallayer, and the top WF metal layer in FIG. 4B.

FIG. 5B is a band diagram of the semiconductor fin, the bottom WF metallayer, and the top WF metal layer in FIG. 4E.

FIGS. 6 and 7 respectively illustrate cross-sectional views of thesemiconductor devices in accordance with some embodiments of the presentdisclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, “around”, “about”, “approximately”, or “substantially”shall generally mean within 20 percent, or within 10 percent, or within5 percent of a given value or range. Numerical quantities given hereinare approximate, meaning that the term “around”, “about”,“approximately”, or “substantially” can be inferred if not expresslystated.

This disclosure provides a gate stack structure with at least a pair ofwork function metal layers that generate dipoles therein to implementfield effect transistors (FETs) with a tuned threshold voltage. In someembodiments, the gate stack may be realized on the device selected fromthe group consisting of planar devices, multi-gate devices, FinFETs, andgate-all-around FETs.

FIGS. 1A and 1B are a flowchart of a method M10 for making asemiconductor device according to aspects of the present disclosure invarious embodiments. Various operations of the method M10 are discussedin association with perspective diagrams FIGS. 2A-2N. Throughout thevarious views and illustrative embodiments, like reference numbers areused to designate like elements. In some embodiments, the semiconductordevice as shown in FIGS. 2A-2N may be intermediate devices fabricatedduring processing of an IC, or a portion thereof, that may includestatic random access memory (SRAM) and/or logic circuits, passivecomponents such as resistors, capacitors, and inductors, and activecomponents such as p-type field effect transistors (PFETs), n-type FETs(NFETs), multi-gate FETs, metal-oxide semiconductor field effecttransistors (MOSFETs), complementary metal-oxide semiconductor (CMOS)transistors, bipolar transistors, high voltage transistors, highfrequency transistors, other memory cells, and combinations thereof.

In operation S12 of method M10, a substrate 110 is provided, as shown inFIG. 2A. The substrate 110 has a P-type region 112 and an N-type region114. In some embodiments, the substrate 110 may be a semiconductormaterial and may include a graded layer or a buried oxide, for example.In some embodiments, the substrate 110 includes bulk silicon that may beundoped or doped (e.g., p-type, n-type, or a combination thereof). Othermaterials that are suitable for semiconductor device formation may beused. Other materials, such as germanium, GaAs, quartz, sapphire, andglass could alternatively be used for the substrate 110. Alternatively,the silicon substrate 110 may be an active layer of asemiconductor-on-insulator (SOI) substrate or a multi-layered structuresuch as a silicon-germanium layer formed on a bulk silicon layer.

In operation S14 of method M10, a plurality of semiconductor fins 116and 118 are respectively formed in the P-type region 112 and the N-typeregion 114 of the substrate 110, as shown in FIG. 2A. In someembodiments, the semiconductor fins 116 and 118 include silicon. It isnote that the number of the semiconductor fins 116 and 118 in FIGS. 2Ais illustrative, and should not limit the claimed scope of the presentdisclosure. For example, in FIG. 2A, the number of the semiconductor fin116 is one, and the number of the semiconductor fin 118 is one. However,in some other embodiments, the numbers of the semiconductor fins 116 and18 may both be greater than one.

The semiconductor fins 116 and 118 may be formed, for example, bypatterning and etching the substrate 110 using photolithographytechniques. Hence, the semiconductor fins 116 and 118 are integrallyformed. In some embodiments, a layer of photoresist material (not shown)is deposited over the substrate 110. The layer of photoresist materialis irradiated (exposed) in accordance with a desired pattern (thesemiconductor fins 116 and 118 in this case) and developed to remove aportion of the photoresist material. The remaining photoresist materialprotects the underlying material from subsequent processing steps, suchas etching. It should be noted that other masks, such as an oxide orsilicon nitride mask, may also be used in the etching process.

In operation S16 of method M10, a plurality of isolation structures 120are formed on the substrate 110, as shown in FIG. 2B. The isolationstructures 120 may be formed by chemical vapor deposition (CVD)techniques using tetra-ethyl-ortho-silicate (TEOS) and oxygen as aprecursor. In some other embodiments, the isolation structures 120 maybe formed by implanting ions, such as oxygen, nitrogen, carbon, or thelike, into the substrate 110. In yet some other embodiments, theisolation structures 120 are insulator layers of a SOI wafer. At leastone of the isolation structures 120 is in contact with the semiconductorfins 116 and 118.

The isolation structures 120, which act as shallow trench isolations(STIs), are formed both in the P-type region 112 and the N-type region114. The portion of the isolation structures 120 formed in the P-typeregion 112 surrounds the semiconductor fin 116, and another portion ofthe isolation structures 120 formed in the N-type region 114 surroundsthe semiconductor fin 118.

In operation S18 of method M10, a plurality of dummy gate stacks 130 pand 130 n are respectively formed over the P-type region 112 and theN-type region of the substrate 110, as shown in FIG. 2C. The dummy gatestack 130 p (130 n) includes a dummy dielectric layer 132, a dummy gateelectrode 134 formed over the dummy dielectric layer 132, and a hardmask layer 136 formed over the dummy gate electrode 134. In someembodiments, a dummy dielectric film and a dummy gate layer (not shown)may be sequentially formed over the substrate 110, and the hard masklayer 136 is formed over the dummy gate layer. The dummy gate layer andthe dummy dielectric film are then patterned using the hard mask layer136 as a mask to form the dummy gate electrode 134 and the dummydielectric layer 132. As such, the dummy dielectric layer 132, the dummygate electrode 134 and the hard mask layer 136 are referred to as thedummy gate stack 130 p (130 n). In some embodiments, the dummydielectric layer 132 may include silicon dioxide, silicon nitride, ahigh-K dielectric material or other suitable material. In variousexamples, the dummy dielectric layer 132 may be deposited by a thermalprocess, an ALD process, a CVD process, a subatmospheric CVD (SACVD)process, a flowable CVD process, a PVD process, or other suitableprocess. In some embodiments, the dummy gate electrode 134 may be madeof polycrystalline-silicon (poly-Si), poly-crystalline silicon-germanium(poly-SiGe), or other suitable materials. The hard mask layer 136 may bemade of silicon nitride or other suitable materials.

In operation S20 of method M10, a plurality of spacer structures 140 arerespectively formed on sidewalls of the dummy gate stacks 130 p and 130n, as shown in FIG. 2D. The spacer structure 140 may include a sealspacer and a main spacer (not shown). The spacer structure 140 includesone or more dielectric materials, such as silicon oxide, siliconnitride, silicon oxynitride, SiCN, SiC_(x)O_(y)N_(z), or combinationsthereof. The seal spacers are formed on sidewalls of the dummy gatestack 130 and the main spacers are formed on the seal spacers. Thespacer structure 140 may be formed using a deposition method, such asplasma enhanced chemical vapor deposition (PECVD), low-pressure chemicalvapor deposition (LPCVD), sub-atmospheric chemical vapor deposition(SACVD), or the like. The formation of the spacer structure 140 mayinclude blanket forming spacer layers and then performing etchingoperations to remove the horizontal portions of the spacer layers. Theremaining vertical portions of the spacer layers form the spacerstructures 140.

In operation S22 of method M10, epitaxy structures 150 are formed onopposite sides of the dummy gate stack 130 p over the P-type region 112,as shown in FIG. 2E. In some embodiments, a mask M1 may be formed on theN-type region 114 of the substrate 110. Then, epitaxy structures 150 areformed on portions of the semiconductor fin 116 uncovered by the dummygate stack 130 p, the spacer structure 140, and the mask M1 byperforming, for example, a selectively growing process. The epitaxystructures 150 are formed by epitaxially growing a semiconductormaterial. The semiconductor material includes single elementsemiconductor material, such as germanium (Ge) or silicon (Si), compoundsemiconductor materials, such as gallium arsenide (GaAs) or aluminumgallium arsenide (AlGaAs), or semiconductor alloy, such as silicongermanium (SiGe) or gallium arsenide phosphide (GaAsP). The epitaxystructures 150 have suitable crystallographic orientations (e.g., a(100), (110), or (111) crystallographic orientation). In someembodiments, the epitaxy structures 150 include source/drain epitaxialstructures. In some embodiments, where a P-type device is desired, theepitaxy structures 150 may include an epitaxially growing silicongermanium (SiGe). The epitaxial processes include CVD depositiontechniques (e.g., vapor-phase epitaxy (VPE) and/or ultra-high vacuum CVD(UHV-CVD)), molecular beam epitaxy, and/or other suitable processes.

In operation S24 of method M10, epitaxy structures 155 are formed onopposite sides of the dummy gate stack 130 n over the N-type region 114,as shown in FIG. 2F. In some embodiments, the mask M1 in FIG. 2E isremoved, and then another mask M2 is formed on the P-type region 112 ofthe substrate 110. Then, epitaxy structures 155 are formed on portionsof the semiconductor fin 118 uncovered by the dummy gate stack 130 n,the spacer structure 140, and the mask M2 by performing, for example, aselectively growing process. The epitaxy structures 155 are formed byepitaxially growing a semiconductor material. The semiconductor materialincludes single element semiconductor material, such as germanium (Ge)or silicon (Si), compound semiconductor materials, such as galliumarsenide (GaAs) or aluminum gallium arsenide (AlGaAs), or semiconductoralloy, such as silicon germanium (SiGe) or gallium arsenide phosphide(GaAsP). The epitaxy structures 155 have suitable crystallographicorientations (e.g., a (100), (110), or (111) crystallographicorientation). In some embodiments, the epitaxy structures 150 includesource/drain epitaxial structures. In some embodiments, where an N-typedevice is desired, the epitaxy structures 155 may include an epitaxiallygrowing silicon phosphorus (SiP) or silicon carbon (SiC). The epitaxialprocesses include CVD deposition techniques (e.g., vapor-phase epitaxy(VPE) and/or ultra-high vacuum CVD (UHV-CVD)), molecular beam epitaxy,and/or other suitable processes.

In operation S26 of method M10, a contact etch stop layer (CESL) 160 andan interlayer dielectric 170 are formed over the substrate 110, as shownin FIG. 2G. Specifically, the mask M2 (see FIG. 2F) is removed beforethe formation of the CESL 160. In some embodiments, the CESL 160 may bea stressed layer or layers. In some embodiments, the CESL 160 has atensile stress and is formed of Si₃N₄. In some other embodiments, theCESL 160 includes materials such as oxynitrides. In yet some otherembodiments, the CESL 160 may have a composite structure including aplurality of layers, such as a silicon nitride layer overlying a siliconoxide layer. The CESL 160 can be formed using plasma enhanced CVD(PECVD), however, other suitable methods, such as low pressure CVD(LPCVD), atomic layer deposition (ALD), and the like, can also be used.

Then, the ILD 170 is formed over the CESL 160. The ILD 170 covers theCESL 160. In some embodiments, the ILD 170 may be formed by depositing adielectric material over the CESL 160 and then a planarization processis performed to the dielectric material and the CESL 160 to expose thedummy gate stacks 130 p and 130 n. In some embodiments, the depositionprocess may be chemical vapor deposition (CVD), high-density plasma CVD,spin-on, sputtering, or other suitable methods. In some embodiments, theILD 170 includes silicon oxide. In some other embodiments, the ILD 170may include silicon oxy-nitride, silicon nitride, or a low-k material.

In operation S28 of method M10, the dummy gate stacks 130 p and 130 nare replaced with metal gate stacks individually having a pair of workfunction (WF) metal layers, wherein dipoles are formed in the pair of WFmetal layers, as shown in FIGS. 2H-2M. Specifically, a replacement gate(RPG) process scheme is employed. In the RPG process scheme, a dummypolysilicon gate (the dummy gate electrode 134 (see FIG. 2G) in thiscase) is formed in advance and is replaced later by a metal gate. Insome embodiments, as shown in FIG. 2H, another mask M3 (may be a hardmask such as Si₃N₄) is formed over the N-type region 114 of thesubstrate 110, and the dummy gate stack 130 p is removed to form anopening 172 with the spacer structure 140 as its sidewall. In some otherembodiments, the dummy dielectric layer 132 (see FIG. 2G) is removed aswell. Alternatively, in some embodiments, the dummy gate electrode 134is removed while the dummy dielectric layer 132 retains. The dummy gatestack 130 p may be removed by dry etch, wet etch, or a combination ofdry and wet etch.

Referring to FIG. 2I, after the opening 172 is formed, the mask M3 ofFIG. 2H is removed. Then, a gate dielectric layer 182′ is formed in theopening 172. The gate dielectric layer 182′ is over the semiconductorfin 116. The gate dielectric layer 182′ can be a high-κ dielectric layerhaving a dielectric constant (κ) higher than the dielectric constant ofSiO₂, i.e. κ>3.9. The gate dielectric layer 182′ may include LaO, AlO,ZrO, TiO, Ta₂O₅, Y₂O₃, SrTiO₃ (STO), BaTiO₃ (BTO), BaZrO, HfZrO, HfLaO,HfSiO, LaSiO, AlSiO, HfTaO, HfTiO, (Ba,Sr)TiO₃ (BST), Al₂O₃, Si₃N₄,oxynitrides (SiON), or other suitable materials. The gate dielectriclayer 182′ is deposited by suitable techniques, such as ALD, CVD, PVD,thermal oxidation, combinations thereof, or other suitable techniques.

Then, a bottom work function (WF) metal layer 184 a′ is conformallyformed over the gate dielectric layer 182′. The bottom WF metal layer184 a′ may include metals and their nitrides (e.g. TiN, TaN, W₂N, TiSiN,TaSiN) with dopants (such as oxygen), or combinations thereof. Thedopants in the bottom WF metal layer 184 a′ are configured to tune thegroup electronegativity thereof, which will be described with thefollowing formed top WF metal layer 184 b′. The WF metal layer 184 a′may be deposited by PVD, CVD, Metal-organic chemical vapor deposition(MOCVD) or atomic layer deposition (ALD).

In some embodiments, the bottom WF metal layer 184 a′ is formed byperforming an ALD process. Atomic layer deposition (ALD) is an approachto filling materials that involves depositing a monolayer of precursorover the substrate 110, purging the chamber, and introducing a reactantthat reacts with the precursor to leave a monolayer of product. Thecycle can be repeated many times to build a layer with a sufficientthickness to be functional. In FIG. 2I, the bottom WF metal layer 184 a′has a thickness T1, which is determined by the deposition cycles of ALDprocesses. In some embodiments, the bottom WF metal layer 184 a′ isformed by performing m cycles of the ALD process to achieve thethickness T1. In some embodiments, the thickness T1 is in a range ofabout 0.1 nm to about 10 nm.

During the ALD processes, the wafer is positioned on a chuck in an ALDprocess chamber. A vacuum is then applied to the ALD process chamber andthe temperature is raised to an acceptable level that is suitable forthe ALD deposition. Precursors are then fed into the ALD processchamber. The precursors form a conformal monolayer over the gatedielectric layer 182′. In some embodiments, for doping the monolayer,the operating temperature may be reduced to increase the oxygen contentin the monolayer. Alternatively, process gases may be fed into the ALDprocess chamber. The process gases are oxygen-containing gases, such asO₂, H₂O, and/or other suitable gases.

Then, a top WF metal layer 184 b′ is conformally formed over the bottomWF metal layer 184 a′. The top WF metal layer 184 b′ may be deposited byPVD, CVD, Metal-organic chemical vapor deposition (MOCVD) or ALD. Insome embodiments, the top WF metal layer 184 b′ is the bottom WF metallayer 184 a′ without dopants. That is, the bottom WF metal layer 184 a′includes the material the same as the top WF metal layer 184 b′ andfurther includes dopants. For example, the top WF metal layer 184 b′ maybe WN_(x), and the bottom WF metal layer 184 a′ may beW_(1-x-y)N_(x)O_(y), where the dopants are oxygen. In FIG. 2I, the topWF metal layer 184 b′ has a thickness T2, which is determined by thedeposition cycles of ALD processes. In some embodiments, the top WFmetal layer 184 b′ is formed by performing n cycles of the ALD processto achieve the thickness T2. In some embodiments, the thickness T2 is ina range of about 0.1 nm to about 10 nm.

In some embodiments, since the bottom WF metal layer 184 a′ and the topWF metal layer 184 b′ include the same elements (e.g., W and N), thebottom WF metal layer 184 a′ and the top WF metal layer 184 b′ may bein-situ formed. Herein, the term “in-situ” means that the top WF metallayer 184 b′ is formed in an ALD process chamber where the bottom WFmetal layer 184 a′ is formed, without breaking vacuum. In some otherembodiments, however, the bottom WF metal layer 184 a′ and the top WFmetal layer 184 b′ may be ex-situ formed. Herein, the term “ex-situ”means that the top WF metal layer 184 b′ is formed in an ALD processchamber different from an ALD process chamber where the bottom WF metallayer 184 a′ is formed.

Then, the remaining opening 172 is filled with a filling metal 186′ onthe top WF metal layer 184 b′. In some embodiments, the filling metal186′ includes the same metal as the work function metal layer 184 b′,e.g., W in this case. As such, the filling metal 186′ and the top WFmetal layer 184 b′ may be formed by using the same precursors. Thefilling metal 186′ is deposited by ALD, PVD, CVD, or other suitableprocess.

Referring to FIG. 2J. A CMP process is applied to remove excessive thefilling metal 186′, the top WF metal layer 184 b′, the bottom WF metallayer 184 a′, and the gate dielectric layer 182′ to provide asubstantially planar top surface. The remaining filling metal 186, theremaining top WF metal layer 184 b, the remaining bottom WF metal layer184 a, and the remaining gate dielectric layer 182 in the opening 172form a gate stack Gp of a P-type device 10. Further, the top WF metallayer 184 b and the bottom WF metal layer 184 a form a pair of WF metallayers 184 p, and the top WF metal layer 184 b is in contact with thebottom WF metal layer 184 a.

FIG. 3A is a band diagram of the semiconductor fin 116, the bottom WFmetal layer 184 a, and the top WF metal layer 184 b in FIG. 2J.Referring to FIGS. 2J and 3A, the bottom WF metal layer 184 a and thetop WF metal layer 184 b have the same material except that the bottomWF metal layer 184 a further includes dopants (e.g., oxygen in thiscase). Therefore, the bottom WF metal layer 184 a and the top WF metallayer 184 b have different group electronegativities. In this case,since the group electronegativity of oxygen is about 3.44, and the groupelectronegativity of nitrogen is about 3.04, the bottom WF metal layer184 a is more electrically negative than the top WF metal layer 184 b.Dipoles (shown in FIG. 3A) are thus formed at the interface of thebottom WF metal layer 184 a and the top WF metal layer 184 b. Thedipoles direct from the bottom WF metal layer 184 a to the top WF metallayer 184 b. These dipoles lower the band of the top WF metal layer 184b, such that the band of the top WF metal layer 184 b is close to thevalence band (Ev). With this configuration, the effective WF of the topWF metal layer 184 b increases, and the threshold voltage (Vt) of themetal gate stack Gp can be tuned accordingly.

The intensity of the dipoles depends on the concentration of the oxygen.When the oxygen concentration is increased, the band the top WF metallayer 184 b is much closer to the valence band. In some embodiments, thebottom WF metal layer 184 a is W_(1-x-y)N_(x)O_(y), where x and y areatomic concentrations. In some embodiments, x is from 0 to about 0.5,and y is greater than 0 and lower than or equal to about 0.3. If y isgreater than about 0.3, the resistivity of the bottom WF metal layer 184a may be too high.

In some embodiments, the thickness T2 of the top WF metal layer 184 b isgreater than the thickness T1 of the bottom WF metal layer 184 a. Thatis, the top WF metal layer 184 b dominates the effective WF of the pairof WF metal layers 184 p. In some embodiments, a ratio of the thicknessT1 to T2 is in a range between about 0.025 and about 1. If the ratio isgreater than 1, then the bottom WF metal layer 184 a will dominate theeffective WF. If the ratio is less than 0.025, then the resistance ofmetal gate becomes large due to less volume in the remaining opening 172for filling metal deposition.

Referring to FIG. 2K, another mask M4 (may be a hard mask such as Si₃N₄)is formed over the P-type region 112 of the substrate 110, and the dummygate stack 130 n is removed to form an opening 174 with the spacerstructure 140 as its sidewall. In some other embodiments, the dummydielectric layer 132 (see FIG. 2J) is removed as well. Alternatively, insome embodiments, the dummy gate electrode 134 is removed while thedummy dielectric layer 132 retains. The dummy gate stack 130 n may beremoved by dry etch, wet etch, or a combination of dry and wet etch.

Referring to FIG. 2L, after the opening 174 is formed, the mask M4 ofFIG. 2K is removed. Then, a gate dielectric layer 192′ is formed in theopening 174. The gate dielectric layer 192′ is over the semiconductorfin 118. The gate dielectric layer 192′ can be a high-κ dielectric layerhaving a dielectric constant (κ) higher than the dielectric constant ofSiO₂, i.e. κ>3.9. The gate dielectric layer 192′ may include LaO, AlO,ZrO, TiO, Ta₂O₅, Y₂O₃, SrTiO₃ (STO), BaTiO₃ (BTO), BaZrO, HfZrO, HfLaO,HfSiO, LaSiO, AlSiO, HfTaO, HfTiO, (Ba,Sr)TiO₃ (BST), Al₂O₃, Si₃N₄,oxynitrides (SiON), or other suitable materials. The gate dielectriclayer 192′ is deposited by suitable techniques, such as ALD, CVD, PVD,thermal oxidation, combinations thereof, or other suitable techniques.

Then, a bottom WF metal layer 194 a′ is conformally formed over the gatedielectric layer 192′. The bottom WF metal layer 194 a′ may includemetals and their nitrides (e.g. TiN, TaN, W₂N, TiSiN, TaSiN), orcombinations thereof. The bottom WF metal layer 194 a′ may be depositedby PVD, CVD, Metal-organic chemical vapor deposition (MOCVD) or atomiclayer deposition (ALD).

In some embodiments, the bottom WF metal layer 194 a′ is formed byperforming an ALD process. In FIG. 2L, the bottom WF metal layer 194 a′has a thickness T3, which is determined by the deposition cycles of ALDprocesses. In some embodiments, the bottom WF metal layer 194 a′ isformed by performing m′ cycles of the ALD process to achieve thethickness T3. In some embodiments, the thickness T3 is in a range ofabout 0.1 nm to about 10 nm.

Then, a top WF metal layer 194 b′ is conformally formed over the bottomWF metal layer 194 a′. The top WF metal layer 194 b′ may be deposited byPVD, CVD, Metal-organic chemical vapor deposition (MOCVD) or ALD. Insome embodiments, the top WF metal layer 194 b′ is the bottom WF metallayer 194 a′ with dopants. That is, the top WF metal layer 194 b′includes the material the same as the bottom WF metal layer 194 a′ andfurther includes dopants. For example, the bottom WF metal layer 194 a′may be WN_(x), and the top WF metal layer 194 b′ may be WNx0 _(y), wherethe dopants are oxygen. In FIG. 2L, the top WF metal layer 194 b′ has athickness T4, which is determined by the deposition cycles of ALDprocesses. In some embodiments, the top WF metal layer 194 b′ is formedby performing n′ cycles of the ALD process to achieve the thickness T4.In some embodiments, the thickness T4 is in a range of about 0.1 nm toabout 10 nm.

In some embodiments, since the bottom WF metal layer 194 a′ and the topWF metal layer 194 b′ include the same elements (e.g., W and N), thebottom WF metal layer 194 a′ and the top WF metal layer 194 b′ may bein-situ formed. In some other embodiments, however, the bottom WF metallayer 194 a′ and the top WF metal layer 194 b′ may be ex-situ formed.

Then, the remaining opening 174 is filled with a filling metal 196′ onthe top WF metal layer 194 b′. In some embodiments, the filling metal196′ includes the same metal as the top WF metal layer 194 b, e.g., W inthis case. That is, the filling metal 196′ and the doped WF metal layer194′ may be formed by using the same precursors. The filling metal 196′is deposited by ALD, PVD, CVD, or other suitable process.

Referring to FIG. 2M. A CMP process is applied to remove excessive thefilling metal 196′, the top WF metal layer 194 b′, the bottom WF metallayer 194 a′, and the gate dielectric layer 192′ to provide asubstantially planar top surface. The remaining filling metal 196, theremaining top WF metal layer 194 b, the remaining bottom WF metal layer194 a, and the remaining gate dielectric layer 192 in the opening 174form a gate stack Gn of an N-type device 20. Further, the top WF metallayer 194 b and the bottom WF metal layer 194 a form a pair of WF metallayers 194 n, and the top WF metal layer 194 b is in contact with thebottom WF metal layer 194 a.

FIG. 3B is a band diagram of the semiconductor fin 118, the bottom WFmetal layer 194 a, and the top WF metal layer 194 b in FIG. 2M.Referring to FIGS. 2M and 3B, the bottom WF metal layer 194 a and thetop WF metal layer 194 b have the same material except that the top WFmetal layer 194 b further includes dopants (e.g., oxygen in this case).Therefore, the bottom WF metal layer 194 a and the top WF metal layer194 b have different group electronegativities. In this case, the top WFmetal layer 194 b is more electrically negative than the bottom WF metallayer 194 a. Dipoles (shown in FIG. 3B) are thus formed at the interfaceof the bottom WF metal layer 194 a and the top WF metal layer 194 b. Thedipoles direct from the top WF metal layer 194 b to the bottom WF metallayer 194 a. These dipoles raise the band of the top WF metal layer 194b, such that the band of the top WF metal layer 194 b is close to theconduction band (Ec). With this configuration, the effective WF of thetop WF metal layer 194 b decreases, and the threshold voltage (Vt) ofthe metal gate stack Gn can be tuned accordingly.

The intensity of the dipoles depends on the concentration of the oxygen.When the oxygen concentration is increased, the band the top WF metallayer 194 b is much closer to the conduction band. In some embodiments,the top WF metal layer 194 b is W_(1-x-y)N_(x)O_(y), where x and y areatomic concentrations. In some embodiments, x is from 0 to about 0.5,and y is greater than 0 and lower than or equal to about 0.3. If y isgreater than about 0.3, the resistivity of the top WF metal layer 194 bmay be too high.

In some embodiments, the thickness T4 of the top WF metal layer 194 b isgreater than the thickness T3 of the bottom WF metal layer 194 a. Thatis, the top WF metal layer 194 b dominates the effective WF of the pairof metal layers 184 p. In some embodiments, a ratio of the thickness T3to T4 is in a range of about 0.025 to about 1. If the ratio is greaterthan 1, then the bottom WF metal layer 194 a will dominate the effectiveWF. If the ratio is less than 0.025, then the resistance of metal gatebecomes large due to less volume in the remaining opening 174 forfilling metal deposition.

In the P-type device 10, the pair of WF metal layers 184 p has a thicklayer (i.e., the top WF metal layer 184 b in this case) and a thin layer(i.e., the bottom WF metal layer 184 a in this case). The thin layer hasa group electronegativity higher than the thick layer. Further, themetal layer having higher group electronegativity (i.e., the bottom WFmetal layer 184 a in this case) is between the gate dielectric layer 182and the metal layer having lower group electronegativity (i.e., the topWF metal layer 184 b in this case).

On contrary, in the N-type device 20, the pair of WF metal layers 194 nhas a thick layer (i.e., the top WF metal layer 194 b in this case) anda thin layer (i.e., the Bottom WF metal layer 194 a in this case). Thethin layer has a group electronegativity lower than the thick layer.Further, the metal layer having lower group electronegativity (i.e., thebottom WF metal layer 194 a in this case) is between the gate dielectriclayer 192 and the metal layer having higher group electronegativity(i.e., the top WF metal layer 194 b in this case).

In operation S30 of method M10, a plurality of contacts 105 are formedin the ILD 170, as shown in FIG. 2N. Specifically, the ILD 170 ispartially removed to form a plurality of openings 176 by variousmethods, including a dry etch, a wet etch, or a combination of dry etchand wet etch. The openings 176 extend through the ILD 170 and expose theepitaxy structure 150 or 155.

Contacts 105 are respectively formed in the openings 176 and over theepitaxy structure 150 or 155. The contacts 105 are respectively andelectrically connected to the epitaxy structure 150 or 155. The contact105 may include a barrier layer and a filling material formed over thebarrier layer. In some embodiments, metal materials can be filled in theopenings 176, and excessive portions of the metal materials are removedby performing a planarization process to form the filling materials. Insome embodiments, the barrier layers may include one or more layers of amaterial such as, for example, titanium, titanium nitride, titaniumtungsten or combinations thereof. In some embodiments, the fillingmaterials may be made of, for example, tungsten, aluminum, copper, orother suitable materials.

According to the aforementioned embodiments, the metal gate stackincludes at least a pair of WF metal layers. The WF metal layers havedifferent group electronegativities. Thus, dipoles are formed at theinterface of these two WF metal layers. The intensity of the dipolesrelates to the effective WF of the metal gate stack. As such, by tuningthe group electronegativities thereof (such as doping at least one ofthe WF metal layers), the effective WF of the metal gate stack can betuned. Further, the directions of the dipoles in the P-type device andthe N-type device are opposite to each other.

In some other embodiments, operation S28 of the method M10 in FIG. 1Bmay be performed in other ways. For example, the metal gate stack Gn maybe formed before the metal gate stack Gp. That is, the processes inFIGS. 2K-2M may be performed before the processes in FIGS. 2H-2J.

The operation S28 of the method M10 in FIG. 1B may be further performedin other ways. FIGS. 4A-4F respectively illustrate cross-sectional viewsof the semiconductor device at various stages in accordance with someembodiments of the present disclosure. Throughout the various views andillustrative embodiments, like reference numbers are used to designatelike elements. The present embodiment may repeat reference numeralsand/or letters used in FIGS. 2A-2N. This repetition is for the purposeof simplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed. In thefollowing embodiments, the structural and material details describedbefore are not repeated hereinafter, and only further information issupplied to perform the semiconductor devices of FIGS. 4A-4F.

In some embodiments, the manufacturing processes of FIGS. 2A-2G areperformed in advance. Since the relevant manufacturing details aresimilar to FIGS. 2A-2H, and, therefore, a description in this regardwill not be repeated hereinafter. Reference is made to FIG. 4A. A gatedielectric layer 212′ is formed in the opening 172. The gate dielectriclayer 212′ and 182′ (see FIG. 2I) may have the same or similar materialsand/or manufacturing process, such that the details thereof are notrepeated hereinafter.

Then, a bottom WF metal layer 214 a′ is conformally formed over the gatedielectric layer 212′. The bottom WF metal layer 214 a′ and the top WFmetal layer 184 b′ (see FIG. 2I) may have the same or similar materialsand/or manufacturing process, such that the details thereof are notrepeated hereinafter. In FIG. 4A, the bottom WF metal layer 214 a′ has athickness T5. In some embodiments, the thickness T5 is in a range ofabout 0.1 nm to about 10 nm.

Then, a top WF metal layer 214 b′ is conformally formed over the bottomWF metal layer 214 a′. The top WF metal layer 214 b′ may be deposited byPVD, CVD, Metal-organic chemical vapor deposition (MOCVD) or ALD. Insome embodiments, the top WF metal layer 214 b′ is the bottom WF metallayer 214 a′ with dopants. That is, the top WF metal layer 214 b′includes the material the same as the bottom WF metal layer 214 a′ andfurther includes dopants. For example, the bottom WF metal layer 214 a′may be WN_(x), and the top WF metal layer 214 b′ may be WN_(x)C_(z),where the dopants are carbon. In FIG. 4A, the top WF metal layer 214 b′has a thickness T6. In some embodiments, the thickness T6 is in a rangeof about 0.1 nm to about 10 nm.

In some embodiments, for doping the monolayer of the top WF metal layer214 b′, carbon-containing precursors may be added into the chamber toincrease the carbon content in the monolayer. Alternatively, processgases may be fed into the ALD process chamber. The process gases arecarbon-containing gases.

In some embodiments, since the bottom WF metal layer 214 a′ and the topWF metal layer 214 b′ include the same elements (e.g., W and N), thebottom WF metal layer 214 a′ and the top WF metal layer 214 b′ may bein-situ formed. In some other embodiments, however, the bottom WF metallayer 214 a′ and the top WF metal layer 214 b′ may be ex-situ formed.

Then, the remaining opening 172 is filled with a filling metal 216′ onthe top WF metal layer 214 b′. In some embodiments, the filling metal216′ includes the same metal as the top WF metal layer 214 b′, e.g., Win this case. That is, the filling metal 216′ and the top WF metal layer214 b′ may be formed by using the same precursors. The filling metal226′ is deposited by ALD, PVD, CVD, or other suitable process.

Referring to FIG. 4B, a CMP process is applied to remove excessive thefilling metal 216′, the bottom WF metal layer 214 a′, the top WF metallayer 214 b′, and the gate dielectric layer 212′ to provide asubstantially planar top surface. The remaining filling metal 216, theremaining bottom WF metal layer 214 a, the remaining top WF metal layer214 b, and the remaining gate dielectric layer 212 in the opening 172form a gate stack Gp′ of a P-type device 10. Further, the bottom WFmetal layer 214 a and the top WF metal layer 214 b form a pair of WFmetal layers 214 p, and the top WF metal layer 214 b is in contact withthe bottom WF metal layer 214 a.

FIG. 5A is the band diagram of the semiconductor fin 116, the bottom WFmetal layer 214 a, and the top WF metal layer 214 b in FIG. 4B.Referring to FIGS. 4B and 5A, the top WF metal layer 214 b and thebottom WF metal layer 214 a have the same material except that the topWF metal layer 214 b further includes dopants (e.g., carbon in thiscase). Therefore, the top WF metal layer 214 b and the bottom WF metallayer 214 a have different group electronegativities. In this case,since the group electronegativity of carbon is about 2.05, and the groupelectronegativity of nitrogen is about 3.04, the top WF metal layer 214b is more electrically positive than the bottom WF metal layer 214 a.Dipoles (shown in FIG. 5A) are thus formed at the interface of the topWF metal layer 214 b and the bottom WF metal layer 214 a. The dipolesdirect from the bottom WF metal layer 214 a to the top WF metal layer214 b. These dipoles lower the band of the top WF metal layer 214 b,such that the band of the top WF metal layer 214 b is close to thevalence band (Ev). With this configuration, the effective WF of the topWF metal layer 214 b increases, and the threshold voltage (Vt) of themetal gate stack Gp′ can be tuned accordingly.

The intensity of the dipoles depends on the concentration of the carbon.When the carbon concentration is increased, the band the top WF metallayer 214 b is much closer to the valence band. In some embodiments, thetop WF metal layer 214 b is W_(1-x-y)N_(x)C_(z), where x and z areatomic concentrations. In some embodiments, x is from 0 to about 0.5,and z is greater than 0 and lower than or equal to about 0.5.

In some embodiments, the thickness T6 of the top WF metal layer 214 b isgreater than the thickness T5 of the bottom WF metal layer 214 a. Thatis, the top WF metal layer 214 b dominates the effective WF of the pairof WF metal layers 214 p. In some embodiments, a ratio of the thicknessT5 to T6 is in a range of about 0.025 to about 1. If the ratio isgreater than 1, then the bottom WF metal layer 214 a will dominate theeffective WF. If the ratio is less than 0.025, then the resistance ofmetal gate become large due to less volume in the remaining opening 172for filling metal deposition.

Referring to FIG. 4C, another mask M4 is formed over the P-type region112 of the substrate 110, and the dummy gate stack 130 n is removed toform an opening 174 with the spacer structure 140 as its sidewall.

Referring to FIG. 4D, after the opening 174 is formed, the mask M4 ofFIG. 4C is removed. Then, a gate dielectric layer 222′ is formed in theopening 174. The gate dielectric layer 222′ and 182′ (see FIG. 2I) mayhave the same or similar materials and/or manufacturing process, suchthat the details thereof are not repeated hereinafter. Then, a bottom WFmetal layer 224 a′ is conformally formed over the gate dielectric layer222′. The bottom WF metal layer 224 a′ and the top WF metal layer 214 b′(see FIG. 4A) may have the same or similar materials and/ormanufacturing process, such that the details thereof are not repeatedhereinafter. In FIG. 4D, the bottom WF metal layer 224 a′ has athickness T7. In some embodiments, the thickness T7 is in a range ofabout 0.1 nm to about 10 nm.

Then, a top WF metal layer 224 b′ is conformally formed over the bottomWF metal layer 224 a′. The top WF metal layer 224 b′ and the bottom WFmetal layer 214 a′ (see FIG. 4A) may have the same or similar materialsand/or manufacturing process, such that the details thereof are notrepeated hereinafter. In FIG. 4D, the top WF metal layer 224 b′ has athickness T8. In some embodiments, the thickness T8 is in a range ofabout 0.1 nm to about 10 nm.

In some embodiments, since the bottom WF metal layer 224 a′ and the topWF metal layer 224 b′ include the same elements (e.g., W and N), thebottom WF metal layer 224 a′ and the top WF metal layer 224 b′ may bein-situ formed. In some other embodiments, however, the bottom WF metallayer 224 a′ and the top WF metal layer 224 b′ may be ex-situ formed.

Then, the remaining opening 174 is filled with a filling metal 226′ onthe top WF metal layer 224 b′. In some embodiments, the filling metal226′ includes the same metal as the top WF metal layer 224 b′, e.g., Win this case. As such, the filling metal 226′ and the top WF metal layer224 b′ may be formed by using the same precursors. The filling metal226′ is deposited by ALD, PVD, CVD, or other suitable process.

Referring to FIG. 4E, a CMP process is applied to remove excessive thefilling metal 226′, the top WF metal layer 224 b′, the bottom WF metallayer 224 a′, and the gate dielectric layer 222′ to provide asubstantially planar top surface. The remaining filling metal 226, theremaining top WF metal layer 224 b, the remaining bottom WF metal layer224 a, and the remaining gate dielectric layer 222 in the opening 174form a gate stack Gn′ of an N-type device 20. Further, the top WF metallayer 224 b and the bottom WF metal layer 224 a form a pair of WF metallayers 224 n, and the top WF metal layer 224 b is in contact with thebottom WF metal layer 224 a.

FIG. 5B is the band diagram of the semiconductor fin 118, the bottom WFmetal layer 224 a, and the top WF metal layer 224 b in FIG. 4E.Referring to FIGS. 4E and 5B, the bottom WF metal layer 224 a and thetop WF metal layer 224 b have the same material except that the bottomWF metal layer 224 a further includes dopants (e.g., carbon in thiscase). Therefore, the bottom WF metal layer 224 a and the top WF metallayer 224 b have different group electronegativities. In this case,since the group electronegativity of carbon is about 2.05, and the groupelectronegativity of nitrogen is about 3.04, the bottom WF metal layer224 a is more electrically positive than the top WF metal layer 224 b.Dipoles (shown in FIG. 5B) are thus formed at the interface of thebottom WF metal layer 224 a and the top WF metal layer 224 b. Thedipoles direct from the top WF metal layer 224 b to the bottom WF metallayer 224 a. These dipoles raise the band of the top WF metal layer 224b, such that the band of the top WF metal layer 224 b is close to theconduction band (Ec). With this configuration, the effective WF of thetop WF metal layer 224 b decreases, and the threshold voltage (Vt) ofthe metal gate stack Gn′ can be tuned accordingly.

The intensity of the dipoles depends on the concentration of the carbon.When the carbon concentration is increased, the band the top WF metallayer 224 b is much closer to the conduction band. In some embodiments,the doped top WF metal layer 224 b is W_(1-x-y)N_(x)C_(z), where x and zare atomic concentrations. In some embodiments, x is from 0 to about0.5, and z is greater than 0 and lower than or equal to about 0.5.

In some embodiments, the thickness T8 of the top WF metal layer 224 b isgreater than the thickness T7 of the bottom WF metal layer 224 a. Thatis, the top WF metal layer 224 b dominates the effective WF of the pairof metal layers 224 n. In some embodiments, a ratio of the thickness T7to T8 is in a range of about 0.025 to about 1. If the ratio is greaterthan 1, then the bottom WF metal layer 224 a will dominate the effectiveWF. If the ratio is less than 0.025, then the resistance of metal gatebecome large due to less volume in the remaining opening 174 for fillingmetal deposition.

In the P-type device 10, the pair of metal layers 214 p has a thicklayer (i.e., the top WF metal layer 214 b in this case) and a thin layer(i.e., the bottom WF metal layer 214 a in this case). The thin layer hasa group electronegativity higher than the thick layer. Further, themetal layer having higher group electronegativity (i.e., the bottom WFmetal layer 214 a in this case) is between the gate dielectric layer 212and the metal layer having lower group electronegativity (i.e., the topWF metal layer 214 b in this case).

On contrary, in the N-type device 20, the pair of metal layers 224 n hasa thick layer (i.e., the top WF metal layer 224 b in this case) and athin layer (i.e., the bottom WF metal layer 224 a in this case). Thethin layer has a group electronegativity lower than the thick layer.Further, the metal layer having lower group electronegativity (i.e., thebottom WF metal layer 224 a in this case) is between the gate dielectriclayer 222 and the metal layer having higher group electronegativity(i.e., the top WF metal layer 224 b in this case).

In operation S30 of method M10, a plurality of contacts 105 are formedin the ILD 170, as shown in FIG. 4F. The contacts 105 in FIGS. 4F and 2Nmay have the same or similar materials and/or manufacturing process,such that the details thereof are not repeated hereinafter.

In some other embodiments, operation S28 of the method M10 in FIG. 1Bmay be performed in other ways. For example, the metal gate stack Gn′may be formed before the metal gate stack Gp′. That is, the processes inFIGS. 4C-4E may be performed before the processes in FIGS. 2H and 4A-4B.

In some other embodiments, the doped WF metal layers in the P-type andN-type devices 10 and 20 may have different dopants. FIGS. 6 and 7respectively illustrate cross-sectional views of the semiconductordevices in accordance with some embodiments of the present disclosure.In FIG. 6, the P-type device 10 includes a metal gate stack Gp, wherethe dopants in the pair of WF metal layers of the metal gate stack Gpare oxygen. The N-type device 20 includes a metal gate stack Gn′, wherethe dopants in the pair of WF metal layers of the metal gate stack Gn′are carbon. In FIG. 7, the P-type device 10 includes a metal gate stackGp′, where the dopants in the pair of WF metal layers of the metal gatestack Gp′ are carbon. The N-type device 20 includes a metal gate stackGn, where the dopants in the pair of WF metal layers of the metal gatestack Gn are oxygen.

It is noted that the aforementioned embodiments are illustrative, andshould not limit the present disclosure. In some other embodiments, thetop and bottom WF metal layers can both include (different or same)dopants. For example, for the P-type device 10, the bottom WF metallayer 184 a (214 a) is W_(1-x1-y1-z1)N_(x1)O_(y1)C_(z1), and the top WFmetal layer 184 b (214 b) is W_(1-x2-y2-z2)N_(x2)O_(y2)C_(z2). In someembodiments, x1 is from 0 to about 0.5, y1 is greater than or equal to 0and lower than or equal to about 0.3, z1 is greater than or equal to 0and lower than or equal to about 0.5, x2 is from 0 to about 0.5, y2 isgreater than or equal to 0 and lower than or equal to about 0.3, and z2is greater than or equal to 0 and lower than or equal to about 0.5. Insome embodiments, y2 is less than y1, and z2 is greater than z1.Embodiments fall within the present disclosure as long as the bottom WFmetal layer 184 a (214 a) has a group electronegativity higher than thetop WF metal layer 184 b (214 b). Furthermore, the metal gate stack ofthe P-type device 10 may include a plurality of WF metal layers (morethan two layers), in which a lower WF metal layer has a groupelectronegativity higher than an upper WF metal layer. Further, theupper WF metal layer is thicker than the lower WF metal layer.

Moreover, for the N-type device 20, the bottom WF metal layer 194 a (224a) is W_(1-x3-y3-z3)N_(x3)O_(y3)C_(z3), and the top WF metal layer 194 b(224 b) is W_(1-x4-y4-z4)N_(x4)O_(y4)C_(z4). In some embodiments, x3 isfrom 0 to about 0.5, y3 is greater than or equal to 0 and lower than orequal to about 0.3, z3 is greater than or equal to 0 and lower than orequal to about 0.5, x4 is from 0 to about 0.5, y4 is greater than orequal to 0 and lower than or equal to about 0.3, and z4 is greater thanor equal to 0 and lower than or equal to about 0.5. In some embodiments,y4 is greater than y3, and z4 is less than z3. Embodiments fall withinthe present disclosure as long as the bottom WF metal layer 194 a (224a) has a group electronegativity lower than the top WF metal layer 194 b(224 b). Furthermore, the metal gate stack of the N-type device 20 mayinclude a plurality of WF metal layers (more than two layers), in whicha lower WF metal layer has a group electronegativity lower than an upperWF metal layer. Further, the upper WF metal layer is thicker than thelower WF metal layer.

Based on the above discussions, it can be seen that the presentdisclosure offers advantages. It is understood, however, that otherembodiments may offer additional advantages, and not all advantages arenecessarily disclosed herein, and that no particular advantage isrequired for all embodiments. One advantage is that the thresholdvoltage of the metal gate stack can be tuned by adjusting the dopantconcentration of the WF metal layer. Another advantage is that the WFmetal layers can be in-situ deposited. Furthermore, the thresholdvoltages of the metal gate stacks of the P-type device and the N-typedevice can be implemented using the same materials with differentdopants.

According to some embodiments, a semiconductor device includes asubstrate, a gate stack, and an epitaxy structure. The gate stack overthe substrate and includes a gate dielectric layer, a bottom workfunction (WF) metal layer, a top WF metal layer, and a filling metal.The bottom WF metal layer is over the gate dielectric layer. The top WFmetal layer is over and in contact with the bottom WF metal layer. Atleast one of the top and bottom WF metal layers includes dopants, andthe top WF metal layer is thicker than the bottom WF metal layer. Thefilling metal is over the top WF metal layer. The epitaxy structure isover the substrate and adjacent the gate stack.

According to some embodiments, a semiconductor device includes a P-typedevice and an N-type device. The P-type device includes a first metalgate including a first bottom WF metal layer and a first top WF metallayer over the first bottom WF metal layer. The first bottom WF metallayer has a group electronegativity higher than a groupelectronegativity of the first top WF metal layer. The N-type device isadjacent the P-type device and includes a second metal gate including asecond bottom WF metal layer and a second top WF metal layer over thesecond bottom WF metal layer. The second bottom WF metal layer has agroup electronegativity higher than a group electronegativity of thesecond top WF metal layer.

According to some embodiments, a method for manufacturing asemiconductor device includes forming a dummy gate over a substrate. Aninterlayer dielectric (ILD) is formed over the substrate and surroundsthe dummy gate. The dummy gate is removed to form an opening in the ILD.A gate dielectric layer is formed in the opening. A pair of doped workfunction (WF) metal layer is formed over the gate dielectric layer. Thepair of doped WF metal layer includes a bottom WF metal layer and a topWF metal layer. A filling metal is formed over the top WF metal layer.The pair of doped WF metal layer and the filling metal include samemetals.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1-14. (canceled)
 15. A method for manufacturing a semiconductor devicecomprising: forming a dummy gate over a substrate; forming an interlayerdielectric (ILD) over the substrate and surrounding the dummy gate;removing the dummy gate to form an opening in the ILD; forming a gatedielectric layer in the opening; forming a pair of doped work function(WF) metal layer over the gate dielectric layer, wherein the pair ofdoped WF metal layer comprises a bottom WF metal layer and a top WFmetal layer; and forming a filling metal over the top WF metal layer,wherein the pair of doped WF metal layer and the filling metal comprisesame metals.
 16. The method of claim 15, wherein forming the pair ofdoped WF metal layer comprises doping oxygen into the bottom WF metallayer.
 17. The method of claim 15, wherein forming the pair of doped WFmetal layer comprises doping carbon.
 18. The method of claim 15, whereinthe top and bottom WF metal layers are formed in a same chamber.
 19. Themethod of claim 15, wherein the top WF metal layer and the filling metalare formed by providing same precursors.
 20. The method of claim 15,wherein the top and bottom WF metal layers have different thicknesses.21. The method of claim 16, wherein the pair of doped WF metal layer isformed over a P-type region of the substrate.
 22. The method of claim15, wherein forming the pair of doped WF metal layer comprises dopingoxygen into the top WF metal layer.
 23. The method of claim 22, whereinthe pair of doped WF metal layers is formed over an N-type region of thesubstrate.
 24. A method for manufacturing a semiconductor devicecomprising: forming a semiconductive fin over a substrate; forming adielectric layer over the semiconductive fin; forming an opening in thedielectric layer to expose a portion of the semiconductive fin; forminga gate dielectric layer in the opening of the dielectric layer; forminga bottom work function metal layer over the gate dielectric layer,wherein the bottom work function metal layer comprisesW_(1-x1-y1)N_(x1)O_(y); forming a top work function metal layer over thebottom work function metal layer, wherein the top work function metallayer comprises WN_(x2); and forming a filling metal over the top workfunction metal layer.
 25. The method of claim 24, wherein y is greaterthan 0 and lower than or equal to about 0.3.
 26. The method of claim 24,wherein x1 is from 0 to about 0.5.
 27. The method of claim 24, wherein athickness of the top work function metal layer is greater than athickness of the bottom work function metal layer.
 28. The method ofclaim 24, wherein the filling metal comprises tungsten.
 29. The methodof claim 24, wherein the top work function metal layer is in contactwith the bottom work function metal layer and the filling metal.
 30. Amethod for manufacturing a semiconductor device comprising: forming afirst dummy gate over a P-type region of a substrate and forming asecond dummy gate over an N-type region of the substrate; forming afirst gate spacer laterally surrounding the first dummy gate and asecond gate spacer laterally surrounding the second dummy gate; removingthe first dummy gate to form a first opening laterally surrounded by thefirst gate spacer; forming a first bottom work function metal layer inthe first opening; forming a first top work function metal layer overthe first bottom work function metal layer; removing the second dummygate to form a second opening laterally surrounded by the second gatespacer; forming a second bottom work function metal layer in the secondopening, wherein the second bottom work function metal layer comprises amaterial substantially the same as the first top work function metallayer; and forming a second top work function metal layer over thesecond bottom work function metal layer, wherein the second top workfunction metal layer comprises a material substantially the same as thefirst bottom work function metal layer.
 31. The method of claim 30,wherein the second top work function metal layer and the first bottomwork function metal layer are doped with oxygen.
 32. The method of claim30, wherein the first top work function metal layer and the secondbottom work function metal layer are undoped materials.
 33. The methodof claim 30, wherein the first bottom work function metal layer and thefirst top work function metal layer comprise tungsten.
 34. The method ofclaim 30, wherein a thickness of the first top work function metal layeris greater than a thickness of the first bottom work function metallayer.